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IRF6614
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
V GS = 0V, I D = 250μA
?Β V DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
38
–––
mV/°C Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
5.9
8.3
m ?
V GS = 10V, I D = 12.7A i
–––
7.1
9.9
V GS = 4.5V, I D = 10.2A i
V GS(th)
? V GS(th) / ? T J
I DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
1.80
-5.5
–––
2.25
–––
1.0
V
mV/°C
μA
V DS = V GS , I D = 250μA
V DS = 32V, V GS = 0V
–––
–––
150
V DS = 32V, V GS = 0V, T J = 125°C
I GSS
gfs
Q g
Q gs1
Q gs2
Q gd
Q godr
Q sw
Q oss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
–––
–––
71
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
19
5.9
1.4
6.0
5.7
7.4
9.5
100
-100
–––
29
–––
–––
–––
–––
–––
–––
nA
S
nC
nC
V GS = 20V
V GS = -20V
V DS = 10V, I D = 10.2A
V DS = 20V
V GS = 4.5V
I D = 10.2A
See Fig. 17
V DS = 16V, V GS = 0V
R G
t d(on)
t r
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
1.0
13
27
1.5
–––
–––
?
V DD = 20V, V GS = 4.5V i
I D = 10.2A
t d(off)
t f
C iss
C oss
C rss
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
18
3.6
2560
370
200
–––
–––
–––
–––
–––
ns
pF
Clamped Inductive Load
V GS = 0V
V DS = 20V
? = 1.0MHz
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
53
MOSFET symbol
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
102
integral reverse
(Body Diode)
g
p-n junction diode.
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
15
5.5
1.0
23
8.3
V
ns
nC
T J = 25°C, I S = 10.2A, V GS = 0V i
T J = 25°C, I F = 10.2A
di/dt = 100A/μs i
Notes:
? Repetitive rating; pulse width limited by max. junction temperature.
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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